Ho1 Bi2 Br1 O4

semiconductor

· Ho1 Bi2 Br1 O4

Ho₁Bi₂Br₁O₄ is an experimental mixed-metal halide oxide semiconductor combining holmium, bismuth, bromine, and oxygen. This compound belongs to the family of layered halide perovskites and related structures, which are of significant research interest for photonic and optoelectronic applications due to their tunable bandgaps and potential for solution processing. While not yet established in commercial production, materials in this compositional space are being investigated for next-generation light-emitting devices, photodetectors, and radiation detection where the combination of heavy elements (Bi, Ho) offers advantages in charge transport and radiation interaction.

experimental semiconductorsoptoelectronic devicesphotodetectorsradiation detectionresearch phase materialshalide-based photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	11,854.4	ksi	—
Shear Modulus(G)	6,549.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.481	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.179	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Bi2 Br1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control