Ho1 B2 Ru3
semiconductorHo₁B₂Ru₃ is an intermetallic compound combining holmium, boron, and ruthenium—a rare-earth transition metal boride that exists primarily in research contexts rather than established commercial production. This material belongs to the family of high-melting-point intermetallics and refractory borides, with potential applications in high-temperature structural and electronic applications where the combination of rare-earth and noble-metal characteristics might offer unique phase stability or electronic properties. Engineers considering this compound should recognize it as an experimental material requiring validation for any specific application, though the boride family generally exhibits hardness, thermal stability, and refractory characteristics valued in extreme-environment scenarios.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |