Ho1 As1

semiconductor

· Ho1 As1

Ho1As1 is a binary intermetallic semiconductor compound composed of holmium and arsenic, belonging to the rare-earth pnictide family of materials. This compound is primarily of research and experimental interest, studied for its electronic and magnetic properties that arise from the 4f electrons of holmium combined with the covalent bonding environment of arsenic. Ho1As1 and related rare-earth arsenides are investigated for potential applications in thermoelectric devices, magnetic sensors, and specialty optoelectronic components where the coupling between magnetism and electronic structure can be exploited.

experimental semiconductorsrare-earth compoundsthermoelectric researchmagnetic sensorssolid-state physics studyhigh-entropy intermetallics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	83.63	GPa	—
Shear Modulus(G)	-11.20	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01710	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.077	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control