Ho(InS2)3 is a ternary semiconductor compound composed of holmium, indium, and sulfur, belonging to the rare-earth metal chalcogenide family. This is primarily a research material investigated for its potential in optoelectronic and photovoltaic applications, where the rare-earth dopant (holmium) can introduce luminescent or magnetic functionality into the indium sulfide host lattice. The compound represents an emerging approach to engineering wide-bandgap semiconductors with tunable electronic and optical properties for next-generation device technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.230 | eV | — |