HgZrOFN

semiconductor

· HgZrOFN

HgZrOFN is an experimental oxynitride semiconductor compound combining mercury, zirconium, oxygen, and nitrogen elements. This mixed-anion material belongs to the broader family of metal oxynitrides, which are of significant research interest for photocatalytic and optoelectronic applications due to their tunable band gaps and enhanced light absorption compared to conventional oxides. While primarily in the research phase rather than established production, oxynitrides in this composition space are being investigated for visible-light photocatalysis, water splitting, and next-generation semiconductor devices where the nitrogen incorporation narrows the bandgap relative to pure oxide counterparts.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic devicesresearch semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—
Magnetic Moment(μB)	-3.329e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgZrOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control