HgZrO3 is a mixed-metal oxide semiconductor compound combining mercury and zirconium in a perovskite-related crystal structure. This is primarily a research-phase material studied for potential optoelectronic and sensing applications, with limited industrial deployment; the material family is of interest for photocatalysis, radiation detection, and high-energy physics instrumentation where the combination of heavy-metal and refractory-oxide properties may offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.717 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.00774 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.276 | eV/atom | — | ||
| ↳ | 0.6200 | eV/atom | — |