HgZnN3

ceramic

· HgZnN3

HgZnN3 is an experimental ternary nitride ceramic compound combining mercury, zinc, and nitrogen elements. This material belongs to the family of transition metal nitrides and mixed-metal nitride systems under active research for wide-bandgap semiconductor and optoelectronic applications. The compound remains largely in the research phase; its potential relevance stems from the semiconductor properties typical of nitride ceramics, though practical industrial deployment and property validation are limited compared to established materials like GaN or AlN.

Research semiconductorsWide-bandgap optoelectronics (exploratory)High-temperature ceramics (potential)Nitride material systemsExperimental thin films

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.932	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgZnN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental