HgVO3 is a mercury vanadate compound belonging to the mixed-metal oxide semiconductor family, combining mercury and vanadium in an oxidic structure. This material remains primarily in the research and development phase, with potential applications in electrochemical systems, photoelectrochemical devices, and specialized sensing technologies where the combined redox properties of mercury and vanadium offer tunable electronic behavior. While not yet widely adopted in mainstream industrial production, compounds in this material family are investigated for next-generation energy conversion and catalytic applications due to their variable valence states and layered structural possibilities.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.6500 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.2010 | μB | — | ||
| ↳ | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.579 | eV/atom | — | ||
| ↳ | 0.4800 | eV/atom | — |