HgTiOFN

semiconductor

· HgTiOFN

HgTiOFN is a mixed-metal oxide-fluoride semiconductor compound combining mercury, titanium, oxygen, and fluorine. This is a research-phase material investigated for its potential in photocatalysis and optoelectronic applications, where the fluoride incorporation is expected to modify band structure and electronic properties compared to conventional titanium oxides. The material represents an emerging class of heteroanionic semiconductors, offering theoretical advantages in visible-light absorption and charge carrier dynamics, though industrial deployment remains limited and primarily confined to specialized research contexts.

photocatalytic water treatmentenvironmental remediation (research)optoelectronic devices (developmental)visible-light photocatalystssemiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	8.408e-17	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgTiOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control