HgSnO3 is an experimental ternary oxide semiconductor composed of mercury, tin, and oxygen, belonging to the perovskite or perovskite-related oxide family. This compound remains primarily in the research phase, with interest driven by its potential as a wide-bandgap semiconductor for optoelectronic and sensing applications, though toxicity concerns associated with mercury chemistry limit practical industrial adoption. Researchers explore HgSnO3 variants to understand lead-free perovskite alternatives and mercury-containing oxide semiconductors, but it has not achieved widespread engineering deployment compared to more established tin oxide or lead-based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.600 | eV | — | ||
| ↳ | 0.2300 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00276 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.298 | eV/atom | — | ||
| ↳ | 0.8000 | eV/atom | — |