HgSiO2S

semiconductor

· HgSiO2S

HgSiO₂S is a quaternary semiconductor compound combining mercury, silicon, oxygen, and sulfur elements, representing an experimental mixed-anion material in the broader family of chalcogenide and oxide semiconductors. This composition is primarily of research interest for optoelectronic and photonic applications where tunable bandgap and mixed-ligand coordination offer potential advantages over conventional binary semiconductors. The material remains largely in development phase, with exploration focused on photovoltaic devices, photodetectors, and optical modulation where the combination of heavy-metal (Hg) and soft-sulfur coordination could enable novel light-matter interactions.

experimental optoelectronicsphotovoltaic researchphotodetector developmentsemiconductor researchchalcogenide materialsoptical modulation devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—
Magnetic Moment(μB)	-0.000164	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgSiO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control