HgPuO3
semiconductorHgPuO3 is an experimental ternary oxide semiconductor combining mercury, plutonium, and oxygen—a research-phase compound from the perovskite or mixed-metal oxide family rather than an established commercial material. This compound exists primarily in academic literature exploring exotic semiconductor phases, nuclear material chemistry, or specialized oxide physics; it has no significant industrial deployment due to the extreme handling requirements of plutonium, radioactive and toxicological hazards, and lack of proven performance advantages over conventional semiconductors. Engineers would encounter this material only in specialized nuclear research, materials science exploration of actinide chemistry, or theoretical studies of radiation-resistant semiconductor phases—not in conventional engineering design.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |