HgPS3

Name: HgPS3
Brand: MatWorld

semiconductor

· HgPS3

HgPS3 is a layered semiconductor compound composed of mercury, phosphorus, and sulfur, belonging to the family of metal phosphorus trisulfides. This material is primarily of research interest for two-dimensional electronics and optoelectronics, as its layered crystal structure allows mechanical exfoliation into few-layer or monolayer forms suitable for next-generation device applications. Unlike conventional bulk semiconductors, HgPS3's weak interlayer bonding and tunable electronic properties make it attractive for exploratory work in flexible electronics, photodetectors, and quantum device research, though it remains largely in the laboratory phase with limited commercial deployment.

two-dimensional semiconductorslayered material researchflexible optoelectronicsphotodetector developmentquantum electronics researchnanoelectronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	4,200.3	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	70.60	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3000	-	DFT · OptB88vdW
Shear Modulus(G)	2,261.1	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1709	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.600	eV	Measured
↳	1.679	eV	DFT · OptB88vdW
↳	2.587	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	16.88	-	DFT · OptB88vdW
↳	11.69	-	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.398	-	DFT · OptB88vdW
↳	6.481	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.6867	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.377	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00124	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00126	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-194	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	346.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	11.00	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1599	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgPS3 — Properties & Data | MatWorld

HgPS3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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Environmental

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