HgInN3

ceramic

· HgInN3

HgInN3 is an experimental ternary nitride ceramic compound containing mercury, indium, and nitrogen—a research material outside conventional industrial production. This composition lies within the broader family of III-nitride semiconductors and mixed-metal nitrides, which are actively investigated for optoelectronic and wide-bandgap device applications. Mercury-containing nitrides remain largely confined to academic research due to toxicity concerns, processing complexity, and limited demonstrated advantages over established alternatives like GaN or InN, though they are studied for potential high-performance electronic or photonic properties in specialized contexts.

experimental semiconductor researchwide-bandgap device developmentoptoelectronic materials explorationIII-nitride material families

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.370	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental