HgIn2Te4

semiconductor

· HgIn2Te4

HgIn2Te4 is a ternary compound semiconductor belonging to the mercury-based chalcogenide family, combining mercury, indium, and tellurium in a 1:2:4 stoichiometry. This material is primarily explored in infrared optoelectronics and radiation detection applications, where its narrow bandgap and high atomic number make it attractive for thermal imaging and gamma-ray detection in research and specialized defense contexts. While less commercially established than binary alternatives like HgCdTe or CdZnTe, HgIn2Te4 offers distinct tuning of bandgap and transport properties through composition control, positioning it as an advanced material for space-borne and cryogenic infrared sensor systems.

infrared detectorsthermal imaging sensorsgamma-ray detectionspace-borne instrumentationnarrow-bandgap semiconductorscryogenic optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgIn2Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control