HgHfO3

semiconductor
· HgHfO3

HgHfO3 is an experimental mixed-metal oxide semiconductor combining mercury and hafnium in a perovskite-like structure. This compound remains largely in the research phase, with potential interest in wide-bandgap semiconductor applications and advanced dielectric systems where hafnium oxides are already established in microelectronics. The mercury incorporation is unusual and represents exploratory work in oxide materials science; practical adoption is limited pending characterization of stability, toxicity concerns, and performance advantages over conventional HfO2-based alternatives.

wide-bandgap semiconductors (research)gate dielectrics (experimental)high-temperature electronics (potential)radiation-resistant devices (speculative)materials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)2 entries
μB
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.