HgHfO3 is an experimental mixed-metal oxide semiconductor combining mercury and hafnium in a perovskite-like structure. This compound remains largely in the research phase, with potential interest in wide-bandgap semiconductor applications and advanced dielectric systems where hafnium oxides are already established in microelectronics. The mercury incorporation is unusual and represents exploratory work in oxide materials science; practical adoption is limited pending characterization of stability, toxicity concerns, and performance advantages over conventional HfO2-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.478 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | DFT | ||
| ↳ | 0.01404 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.418 | eV/atom | DFT | ||
| ↳ | 0.6200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data