HgHfO2S is a quaternary semiconductor compound combining mercury, hafnium, oxygen, and sulfur—a relatively unexplored material composition that belongs to the broader family of mixed-anion semiconductors. This is an experimental or research-phase material, not yet widely deployed in commercial applications; it represents an emerging area of materials science investigating how combining different anion types (oxygen and sulfur) in hafnium-based systems can engineer new electronic and optical properties. The material's potential lies in optoelectronic or photovoltaic applications where the mixed-anion structure could offer tunable bandgap or improved charge transport compared to conventional binary or ternary semiconductors, though practical applications and manufacturing viability remain under investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.0000690 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7400 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data