HgGeO3 — Properties & Data | MatWorld

HgGeO3

semiconductor

· HgGeO3

HgGeO3 is an inorganic semiconductor compound containing mercury, germanium, and oxygen, representing a mixed-metal oxide in the broader family of functional ceramics. This is primarily a research-phase material studied for its semiconducting properties rather than a mature commercial compound; its potential applications lie in optoelectronic devices and photonic sensors where the specific band structure and optical response of mercury-germanium oxides may offer advantages over conventional semiconductors. Engineers would consider this material only in specialized R&D contexts where its unique electronic or photonic characteristics address constraints unmet by established alternatives like silicon, gallium arsenide, or other wide-bandgap semiconductors.

optoelectronic researchphotonic sensors (experimental)wide-bandgap semiconductor developmentmercury-based device researchspecialty oxide semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.3471	lb/in³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.000	eV	DFT · OptB88vdW
↳	0.2640	eV	DFT · PBE
↳	0.3000	eV	DFT · GLLB-SC
Magnetic Moment(μB)2 entries	0.00193	μB	DFT
↳	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.0000509	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.0000978	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	7.160	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	9.900	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.3157	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)3 entries	-1.168	eV/atom	DFT
↳	0.7800	eV/atom	DFT
↳	-0.8491	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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HgGeO3

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