HgGeO3
semiconductorHgGeO3 is an inorganic semiconductor compound containing mercury, germanium, and oxygen, representing a mixed-metal oxide in the broader family of functional ceramics. This is primarily a research-phase material studied for its semiconducting properties rather than a mature commercial compound; its potential applications lie in optoelectronic devices and photonic sensors where the specific band structure and optical response of mercury-germanium oxides may offer advantages over conventional semiconductors. Engineers would consider this material only in specialized R&D contexts where its unique electronic or photonic characteristics address constraints unmet by established alternatives like silicon, gallium arsenide, or other wide-bandgap semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.608 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.2640 | eV | — | ||
| ↳ | 0.3000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.00193 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 7.160 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3157 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.168 | eV/atom | — | ||
| ↳ | 0.7800 | eV/atom | — | ||
| ↳ | -0.8491 | eV/atom | — |