HgGaO2N

ceramic

· HgGaO2N

HgGaO₂N is an experimental mixed-metal oxynitride ceramic compound containing mercury, gallium, oxygen, and nitrogen. This material remains primarily in research and development stages, with investigations focused on semiconductor and optoelectronic applications due to its potential wide bandgap characteristics and mixed-anion chemistry. Interest in this compound family stems from the ability to tune electronic properties through oxynitride composition, positioning it as a candidate for next-generation photocatalysis, wide-bandgap semiconductors, or advanced optical devices, though industrial adoption has not yet materialized.

photocatalytic materials (research)wide-bandgap semiconductors (exploratory)optical coatings (potential)environmental remediation catalysts (theoretical)high-temperature electronics (future interest)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.096	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.360	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental