HgBr — Properties & Data | MatWorld

HgBr

Name: HgBr
Brand: MatWorld

semiconductor

· HgBr

HgBr is a mercury halide semiconductor compound belonging to the family of metal halides, which are layered crystalline materials with tunable electronic properties. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where its layered structure and semiconductor characteristics make it a candidate for next-generation devices including photodetectors, light emitters, and potentially solar cells. HgBr and related mercury halides are notable for their strong light-matter interaction and structural flexibility, though their toxicity and stability concerns require careful handling and may limit commercial deployment compared to less hazardous halide alternatives.

experimental photodetectorsresearch optoelectronicslayered semiconductor devicesphotonic materials developmentx-ray/gamma detection (research)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	3,707.2	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	397.1	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3500	-	DFT · OptB88vdW
Shear Modulus(G)	1,750.6	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2712	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.600	eV	Measured
↳	1.818	eV	DFT · OptB88vdW
↳	2.618	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	16.55	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.055	-	DFT · OptB88vdW
↳	5.054	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.7833	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.880	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00273	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00257	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-202.7	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	317.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	10.37	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.2671	eV/atom	DFT · OptB88vdW
↳	-0.5290	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgBr

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