HgBO2F

semiconductor

· HgBO2F

HgBO2F is an inorganic compound combining mercury, boron, oxygen, and fluorine elements, belonging to the broader family of metal borate fluorides with semiconductor properties. This material is primarily of research interest rather than established industrial production, with potential applications in nonlinear optical devices and specialized photonic systems where its unique electronic structure may offer advantages. The fluorine substitution in the borate framework is notable for modulating electronic band structure compared to conventional borates, making it relevant for exploratory work in UV-visible optical materials and solid-state chemistry, though engineering adoption remains limited pending further characterization and scalability development.

nonlinear optical devices (research phase)photonic materials (experimental)optical frequency conversionsemiconductor research compoundsborate-based optical materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	4.584e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HgBO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control