HgBi2S4 is a ternary sulfide ceramic compound belonging to the chalcogenide family, combining mercury, bismuth, and sulfur elements in a fixed stoichiometric ratio. This material is primarily of research and emerging-technology interest rather than established industrial production, with investigation focused on its semiconducting and optoelectronic properties for potential photovoltaic, photodetector, or thermoelectric applications. The compound's relatively high density and moderate elastic stiffness make it a candidate for specialized functional ceramics where chemical stability and narrow bandgap semiconducting behavior are needed, though commercial deployment remains limited compared to more mature alternatives like CdTe or perovskite systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.68 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 15.83 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.804 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.042 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 81.43 | - | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3349 | eV/atom | — |