HgB₂As is a ternary ceramic compound combining mercury, boron, and arsenic elements, belonging to the class of intermetallic or mixed-anion ceramics. This is a research-phase material with limited industrial deployment; compounds in this chemical family are primarily investigated for specialized electronic, optoelectronic, or thermoelectric applications where the combination of metallic and semiconducting character may offer unique properties. Engineers would consider this material only in advanced research contexts exploring novel functional ceramics, as conventional alternatives (established semiconductors, standard ceramics) dominate commercial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.750 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 2.029 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.930 | eV/atom | — |