HgAs is a mercury arsenide compound ceramic belonging to the II-VI semiconductor family, characterized by a zinc blende crystal structure. This material is primarily of research and laboratory interest rather than established in high-volume industrial production, with investigations focused on its optoelectronic and thermoelectric properties. It represents part of the broader exploration of binary mercury chalcogenides and pnictides for specialized semiconductor applications where mercury's unique electronic contributions offer potential advantages over more conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,608.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 3,891.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3434 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2970 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2970 | eV/atom | — |