Hg8I4O4 is an inorganic compound combining mercury, iodine, and oxygen in a mixed-valence structure, classified as a semiconductor material. This compound belongs to the family of halide-based semiconductors and is primarily of research interest rather than established industrial production. The material's potential applications center on optoelectronic devices, radiation detection, and solid-state physics studies, where mixed-metal halide semiconductors are being explored as alternatives to conventional semiconductors for specialized high-energy photon interactions and narrow-bandgap device engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8828 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2830 | eV/atom | — |