Hg6As4CdBr6

semiconductor

· Hg6As4CdBr6

Hg6As4CdBr6 is a mixed-metal halide semiconductor compound containing mercury, arsenic, cadmium, and bromine. This is a research-phase material within the broader family of multi-component halide semiconductors, studied primarily for optoelectronic and photovoltaic applications where tunable bandgap and crystal structure are advantageous. While not yet commercialized at scale, compounds in this family are investigated as alternatives to conventional III-V or perovskite semiconductors, though practical deployment remains limited by toxicity concerns (mercury and cadmium content) and thermal stability challenges.

experimental optoelectronicsphotovoltaic researchinfrared detectorslaboratory/research applicationscompound semiconductor developmentbandgap engineering studies

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.890	eV	—

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Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg6As4CdBr6

Electrical Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards