Hg₆As₂ is a mercury-arsenic binary compound belonging to the narrow class of mercury chalcogenide and pnictide semiconductors. This material is primarily of research and specialized device interest rather than high-volume production, explored for its unique electronic and optical properties in the mercury-based semiconductor family. Applications remain largely experimental, centered on infrared detection, specialized optoelectronic devices, and fundamental studies of mercury-pnictide phase behavior; its toxicity and rarity in production limit industrial adoption compared to mainstream III-V semiconductors or silicon.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2940 | eV/atom | — |