Hg6 As2 S8 Br2

semiconductor

· Hg6 As2 S8 Br2

Hg6As2S8Br2 is a mixed-halide chalcogenide semiconductor compound combining mercury, arsenic, sulfur, and bromine elements. This is a specialized research material within the broader family of mercury-based chalcogenide semiconductors, typically investigated for its tunable band gap and nonlinear optical properties rather than mainstream industrial production. The material's potential lies in advanced photonics applications, infrared optics, and radiation detection systems where the combination of heavy elements and chalcogenide bonding offers unique light-matter interactions not available in conventional semiconductors.

infrared optics and detectorsnonlinear optical devicesradiation detectionphotonic researchexperimental semiconductor compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.371	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2070	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg6 As2 S8 Br2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control