Hg5AsS2I3 is a mixed-halide semiconductor compound containing mercury, arsenic, sulfur, and iodine—a member of the quaternary chalcohalide family. This is a research-phase material being investigated for its electronic and optical properties, particularly in contexts where tunable bandgaps and photosensitive behavior are desired; it remains largely experimental rather than established in volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.570 | eV | — |