Hg4As2.5InBr3.5 is a complex mixed-halide semiconductor compound combining mercury, arsenic, indium, and bromine in a quaternary system. This material belongs to the family of halide perovskites and related semiconductors, representing an experimental composition likely under investigation for optoelectronic or photovoltaic applications where tunable bandgap and carrier transport properties are desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.710 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data