Hg4As2.5InBr3.5

semiconductor

· Hg4As2.5InBr3.5

Hg4As2.5InBr3.5 is a complex mixed-halide semiconductor compound combining mercury, arsenic, indium, and bromine in a quaternary system. This material belongs to the family of halide perovskites and related semiconductors, representing an experimental composition likely under investigation for optoelectronic or photovoltaic applications where tunable bandgap and carrier transport properties are desired.

experimental optoelectronicsphotovoltaic researchinfrared detectorssemiconductor device developmentmaterials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.710	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg4As2.5InBr3.5

Electrical Properties

Regulatory Screening

Environmental

Export Control