Hg4 Mo2 O8

semiconductor

· Hg4 Mo2 O8

Hg₄Mo₂O₈ is a mixed-valence mercury-molybdenum oxide semiconductor combining mercury and molybdenum in a complex oxide structure. This is primarily a research-phase material studied for its semiconductor properties and potential in electrochemical or optoelectronic applications, rather than a commercially established engineering material. Interest in this compound centers on its mixed-metal oxide framework, which may offer tunable electronic properties for energy storage, catalysis, or sensing applications in laboratory and early-stage development contexts.

experimental semiconductor researchelectrochemical device developmentoxide-based catalystssensor materials researchenergy storage componentssolid-state electronics investigation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.806	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.363	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg4 Mo2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control