Hg₄C₄N₈ is an experimental semiconductor compound combining mercury, carbon, and nitrogen elements, representing an emerging class of multi-element nitride and carbide semiconductors under investigation for advanced electronic and photonic applications. While not yet established in mainstream industrial production, this material belongs to a research family exploring novel bandgap engineering through complex ternary and quaternary compositions, with potential relevance for high-performance optoelectronics and wide-bandgap semiconductor devices that could outperform conventional III-V semiconductors in specific high-temperature or high-frequency regimes.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,538 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,182.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.994 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4780 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data