Mercury telluride (HgTe) is a narrow-bandgap semiconductor compound from the II-VI material family, notable for its tunable electronic properties and high carrier mobility. It is primarily investigated for infrared detection and sensing applications, including thermal imaging and spectroscopy systems where its narrow bandgap enables sensitivity across the mid- to far-infrared spectrum. HgTe-based materials, particularly in heterostructure configurations (such as HgTe/CdTe), are also of significant research interest as topological insulators and quantum well systems for next-generation electronic and photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.51 | GPa | — | ||
Shear Modulus(G) | 13.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1728 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05800 | eV/atom | — |