Hg3O3 is an experimental mercury oxide semiconductor compound under investigation for potential optoelectronic and photonic applications. This material belongs to the mercury-oxygen system, which has attracted research interest for its semiconducting properties and potential use in specialized sensing or light-emission devices. As a research-phase material rather than an established commercial product, Hg3O3 represents an exploratory direction within the broader class of metal oxide semiconductors, though widespread industrial adoption remains limited pending further characterization and feasibility studies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,118.2 | ksi | — | ||
Shear Modulus(G) | 2,084.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.307 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3440 | eV/atom | — |