Hg3 As1

semiconductor

· Hg3 As1

Hg₃As₁ is a mercury-arsenic intermetallic compound belonging to the semiconductor material family, characterized by a defined stoichiometric ratio of mercury to arsenic atoms. This material is primarily of research and theoretical interest rather than established industrial production, with potential applications in specialized optoelectronic and thermoelectric devices where mercury-based semiconductors offer unique band structure properties. The compound represents an area of active materials science investigation, particularly relevant to researchers exploring mercury chalcogenides and pnictides for niche applications requiring unusual electrical or thermal transport characteristics.

research semiconductorsoptoelectronic devices (experimental)thermoelectric materials (exploratory)intermetallic compoundsmaterials science investigationnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00180	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2730	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg3 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control