Hg2I4O12 is a mercury-based iodide oxide semiconductor compound that belongs to the family of mixed-halide oxides with potential optoelectronic functionality. This material is primarily of research interest rather than established in mainstream industrial production, being investigated for applications in radiation detection, photonic devices, and specialty optical systems where its semiconductor properties and heavy-metal composition provide unique advantages. The compound's structural and electronic characteristics make it a candidate for next-generation sensing and imaging technologies, though practical deployment remains limited compared to more mature semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,180.2 | ksi | — | ||
Shear Modulus(G) | 2,655.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.740 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3970 | eV/atom | — |