Hg2 I2 Br2
semiconductorHg₂I₂Br₂ is a mixed-halide mercury compound semiconductor belonging to the family of mercury halide materials, which have been investigated for optoelectronic and radiation detection applications. This is primarily a research-phase material rather than a commodity product; mercury halide semiconductors are studied for their potential in X-ray and gamma-ray detection systems, infrared sensing, and other specialized photonic applications where their unique band structure and high atomic number offer advantages. The mixed halide composition (combining iodide and bromide) allows tuning of electronic properties compared to binary mercury halides, making it of interest in materials engineering for next-generation radiation detector development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |