Hg2 Bi4 S8
semiconductorHg₂Bi₄S₈ is a quaternary semiconductor compound belonging to the mercury bismuth sulfide family, which exhibits layered crystal structures and mixed-valence metal chemistry. This material is primarily of research and development interest for thermoelectric applications and advanced photovoltaic devices, where its unique band structure and phonon-scattering properties offer potential advantages over conventional semiconductors in energy conversion efficiency. While not yet widely commercialized, compounds in this material family are investigated for their potential to operate effectively at moderate to high temperatures where traditional semiconductors degrade, making them candidates for next-generation energy harvesting and thermal-to-electric conversion systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |