Hg2 Bi4 S8

semiconductor

· Hg2 Bi4 S8

Hg₂Bi₄S₈ is a quaternary semiconductor compound belonging to the mercury bismuth sulfide family, which exhibits layered crystal structures and mixed-valence metal chemistry. This material is primarily of research and development interest for thermoelectric applications and advanced photovoltaic devices, where its unique band structure and phonon-scattering properties offer potential advantages over conventional semiconductors in energy conversion efficiency. While not yet widely commercialized, compounds in this material family are investigated for their potential to operate effectively at moderate to high temperatures where traditional semiconductors degrade, making them candidates for next-generation energy harvesting and thermal-to-electric conversion systems.

thermoelectric devicesresearch photovoltaicsadvanced semiconductorswaste heat recoveryhigh-temperature energy conversionmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	35.68	GPa	—
Shear Modulus(G)	15.83	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.042	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3690	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg2 Bi4 S8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control