Hg₁Sb₂O₆ is a ternary oxide semiconductor compound combining mercury, antimony, and oxygen in a defined stoichiometric ratio. This material belongs to the family of mixed-metal oxides and is primarily of research interest rather than established in high-volume industrial production. The compound is investigated for potential applications in optoelectronic devices, photocatalysis, and sensing technologies due to the semiconductor properties arising from its unique crystal structure and the electronic contributions of both mercury and antimony oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,094.3 | ksi | — | ||
Shear Modulus(G) | 5,524.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6569 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.231 | eV/atom | — |