HgO₂ is an experimental mercury oxide semiconductor compound currently under investigation in materials research rather than established in commercial production. This material belongs to the family of metal oxide semiconductors and is primarily studied for its potential electronic and optoelectronic properties, though practical applications remain limited due to mercury's toxicity and regulatory restrictions. Engineers and researchers exploring this compound are typically investigating novel semiconductor architectures, sensing applications, or theoretical materials science where mercury-based systems offer unique electronic characteristics not readily available in more conventional oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 61.18 | GPa | — | ||
Shear Modulus(G) | 14.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3887 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01100 | eV/atom | — |