Hg1 Ge1 O3 — Properties & Data | MatWorld

Hg1 Ge1 O3

semiconductor

· Hg1 Ge1 O3

HgGeO₃ is a ternary oxide semiconductor compound combining mercury, germanium, and oxygen in a 1:1:3 stoichiometry. This material exists primarily in research and development contexts, where it is investigated for its semiconducting properties and potential optoelectronic characteristics within the broader family of metal oxide semiconductors. The compound's mercury content and germanium-based composition position it as a candidate for niche applications in radiation detection, photocatalysis, or specialized sensor systems, though practical industrial adoption remains limited compared to more established semiconductor oxides.

radiation detection (research)photocatalytic applications (experimental)semiconductor researchoptical sensors (developmental)mercury-germanium oxide systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04340	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8970	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg1 Ge1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control