Hg1 Bi3

semiconductor

· Hg1 Bi3

Hg₁Bi₃ is a bismuth-mercury intermetallic compound belonging to the narrow class of mercury-based semiconductors. This material is primarily of research and specialized optoelectronic interest, studied for potential applications in infrared detection and narrow-bandgap semiconductor devices where its unique electronic structure offers advantages over more conventional III-V or II-VI semiconductors. Engineers would consider this material in niche scenarios requiring mercury-based semiconductor properties, though its toxicity profile and processing complexity limit broader industrial adoption compared to lead-free or non-toxic alternatives.

infrared photodetectorsnarrow-bandgap semiconductorsresearch optoelectronicsmercury-based electronicsspecialized thermal sensorslow-temperature device physics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00510	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg1 Bi3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control