Hg1 As2 O6

semiconductor

· Hg1 As2 O6

Hg₁As₂O₆ is an inorganic semiconductor compound combining mercury, arsenic, and oxygen in a mixed-valence oxide structure. This material is primarily of research interest rather than established in commercial production, belonging to the broader family of metal arsenate semiconductors being investigated for photoelectrochemical and optoelectronic applications. While not yet widely deployed industrially, compounds in this family are being explored for their tunable bandgap and potential use in next-generation photovoltaic and photocatalytic devices, though practical adoption remains limited due to toxicity concerns associated with both mercury and arsenic constituents.

experimental optoelectronicsphotocatalytic materials researchsemiconducting oxides developmentphotoelectrochemical devicesresearch-phase materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6070	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.068	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Hg1 As2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control