Hg0.9Cd0.1Se
semiconductorHg0.9Cd0.1Se is a mercury cadmium selenide alloy, a narrow-bandgap II-VI semiconductor compound engineered by partial substitution of mercury with cadmium in mercury selenide. This material is primarily investigated for infrared detection and thermal imaging applications, where its tunable bandgap in the mid-to-long-wavelength infrared region (2–12 μm) makes it valuable for operation at elevated temperatures without cryogenic cooling. The cadmium doping modifies the bandgap of the parent HgSe material, enabling optimization for specific detection wavelengths; Hg0.9Cd0.1Se is a research-grade composition used to balance sensitivity and thermal stability in specialized sensing systems, though toxicity concerns and the maturity of competing materials (such as HgCdTe with different Cd fractions) limit broader commercialization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |