Hg₀.₈Zn₀.₂Te is a narrow-bandgap II-VI semiconductor alloy combining mercury telluride with zinc telluride, designed to operate in the infrared spectrum. This material is primarily used in research and specialized defense/sensing applications where room-temperature or cryogenic infrared detection is required, particularly in the 8–14 μm (LWIR) and extended wavelength ranges where conventional semiconductors are insensitive. Mercury telluride-based alloys remain the material of choice for high-performance, low-noise infrared focal plane arrays and thermal imaging systems, though they require careful handling due to mercury toxicity and are being gradually supplemented by alternatives like HgCdTe in some commercial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08000 | eV | — |