Hg0.8Zn0.2Te

semiconductor
· Hg0.8Zn0.2Te

Hg₀.₈Zn₀.₂Te is a narrow-bandgap II-VI semiconductor alloy combining mercury telluride with zinc telluride, designed to operate in the infrared spectrum. This material is primarily used in research and specialized defense/sensing applications where room-temperature or cryogenic infrared detection is required, particularly in the 8–14 μm (LWIR) and extended wavelength ranges where conventional semiconductors are insensitive. Mercury telluride-based alloys remain the material of choice for high-performance, low-noise infrared focal plane arrays and thermal imaging systems, though they require careful handling due to mercury toxicity and are being gradually supplemented by alternatives like HgCdTe in some commercial applications.

infrared detectorsthermal imagingfocal plane arrays (FPA)military/defense sensingcryogenic spectroscopyresearch & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.