Hg0.1Zn0.9Te

semiconductor
· Hg0.1Zn0.9Te

Hg₀.₁Zn₀.₉Te is a mercury-zinc telluride alloy belonging to the II-VI semiconductor family, formed by substituting a small fraction of zinc with mercury in zinc telluride. This narrow-bandgap material is primarily investigated for infrared detection and imaging applications, where it can operate in the medium-wavelength infrared (MWIR) region; its mercury content allows bandgap engineering to achieve sensitivity in wavelength ranges difficult to access with pure ZnTe or CdZnTe. While not as widely deployed as HgCdTe (mercury-cadmium telluride), this alloy represents an alternative approach to tuning infrared detector performance and is of research interest for thermal imaging, spectroscopy, and military/security sensing applications where mercury substitution offers different toxicity or processing trade-offs compared to cadmium-based analogs.

infrared detectorsthermal imaging sensorsMWIR spectroscopymilitary/security sensingbandgap-engineered semiconductorsresearch/development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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Regulatory Screening

Environmental

Export Control

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